No. |
Part Name |
Description |
Manufacturer |
211 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
212 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
213 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
214 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
215 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
216 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
217 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
218 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
219 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
220 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
221 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
222 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
223 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
224 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
225 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
226 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
227 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
228 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
229 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
230 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
231 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
232 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
233 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
234 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
235 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
236 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
237 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
238 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
239 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
240 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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