| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 182 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 183 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 184 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 185 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 186 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 187 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 188 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 189 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 190 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 191 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 192 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 193 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 194 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 195 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 196 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 197 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 198 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 199 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 200 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 201 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 202 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 203 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 204 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 205 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 206 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 207 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 208 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 209 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 210 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
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