| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 212 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 213 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 214 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 215 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 216 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 217 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 218 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 219 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 220 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 221 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 222 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 223 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 224 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 225 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 226 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 227 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 228 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 229 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 230 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 231 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 232 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 233 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 234 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 235 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 236 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 237 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 238 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 239 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 240 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
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