| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 182 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 183 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 184 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 185 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 186 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 187 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 188 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 189 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 190 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 191 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 192 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 193 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 194 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 195 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 196 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 197 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 198 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 199 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 200 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 201 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 202 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 203 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 204 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 205 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 206 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 207 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 208 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 209 |
2N5490 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 210 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
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