| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 92 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 93 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 94 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 95 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 96 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 97 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 98 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 99 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 100 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 101 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 102 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 103 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 104 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 105 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 106 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 107 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 108 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 109 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 110 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 111 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 112 |
2N331 |
PNP germanium transistor for audio range amplifier and switching service in military equipment |
Motorola |
| 113 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 114 |
2N3441 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 115 |
2N3442 |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX20 |
SESCOSEM |
| 116 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 117 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 118 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 119 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 120 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
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