No. |
Part Name |
Description |
Manufacturer |
181 |
DS53-0001-TR |
824-960 MHz, Low cost three-way power splitter/combiner |
MA-Com |
182 |
DS53-0001-TR |
Low Cost Three Way Power Splitter/Combiner 824 - 960 MHz |
Tyco Electronics |
183 |
DS53-0005 |
1850-1990 MHz, Low cost three-way GMIC SMT power divider |
MA-Com |
184 |
DS53-0005 |
Low Cost Three-Way GMIC SMT Power Divider 1850 . 1990 MHz |
Tyco Electronics |
185 |
DS53-0005-RTR |
1850-1990 MHz, Low cost three-way GMIC SMT power divider |
MA-Com |
186 |
DS53-0005-RTR |
Low Cost Three-Way GMIC SMT Power Divider 1850 . 1990 MHz |
Tyco Electronics |
187 |
DS53-0005-TR |
1850-1990 MHz, Low cost three-way GMIC SMT power divider |
MA-Com |
188 |
DS53-0005-TR |
Low Cost Three-Way GMIC SMT Power Divider 1850 . 1990 MHz |
Tyco Electronics |
189 |
DSS5320T |
20V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
190 |
DSS5320T-7 |
20V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
191 |
ELM-1081SURWA-S530-A2 |
The ELM-1081 series are a large emitting area ED sources configured in a 40 dots 5*8 matrix array |
Everlight Electronics |
192 |
ELM-1081SURWA/S530-A2 |
The ELM-1081 series are a large emitting area ED sources configured in a 40 dots 5*8 matrix array |
Everlight Electronics |
193 |
FDMS5352 |
60V N-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
194 |
FDMS5360L_F085 |
N-Channel Power Trench� MOSFET 60V, 60A, 8.5m? |
Fairchild Semiconductor |
195 |
FDMS5362L_F085 |
N-Channel Power Trench� MOSFET 60V, 22A, 33m? |
Fairchild Semiconductor |
196 |
FDS5351 |
60V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
197 |
GES5305 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
198 |
GES5306 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
199 |
GES5306A |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
200 |
GES5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
201 |
GES5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
202 |
GES5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
203 |
GP1S53V |
Compact Photointerrupter |
SHARP |
204 |
GTRFS536 |
Mini size of Discrete semiconductor elements |
SINYORK |
205 |
HS5306 |
Small Signal Transistors |
Central Semiconductor |
206 |
HS5306A |
Small Signal Transistors |
Central Semiconductor |
207 |
HS5308 |
Small Signal Transistors |
Central Semiconductor |
208 |
HS5308A |
Small Signal Transistors |
Central Semiconductor |
209 |
ICS5342 |
16-Bit Integrated Clock-LUT-DAC |
Integrated Circuit Systems |
210 |
IRFS530 |
Advanced Power MOSFET |
Fairchild Semiconductor |
| | | |