No. |
Part Name |
Description |
Manufacturer |
241 |
LS5380-J |
5 mm T1 3/4 LED, Diffused Wide-Angle LED |
Siemens |
242 |
LT1S53A |
3.3x2.9mm, 1.1mm Thickness, Milky Diffusion Chip LED Devices |
SHARP |
243 |
MN103S53G |
Microcomputer - 32bit - General Purpose |
Panasonic |
244 |
MPS5305C |
NPN TRANSISTOR |
etc |
245 |
MPS5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
246 |
MPS5306C |
NPN TRANSISTOR |
etc |
247 |
MPS5308 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
248 |
MPS536 |
PNP Silicon High Frequency Transistor, low noise, high RF gain |
Motorola |
249 |
NX8563LAS533-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC. |
NEC |
250 |
NX8563LAS533-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-APC. |
NEC |
251 |
NX8567SAS533-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. FC-UPC connector. |
NEC |
252 |
NX8567SAS533-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. SC-UPC connector. |
NEC |
253 |
NX8567SAS537-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1553.731 nm. Frequency 192.95 THz. FC-UPC connector. |
NEC |
254 |
NX8567SAS537-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1553.731 nm. Frequency 192.95 THz. SC-UPC connector. |
NEC |
255 |
PBSS5320D |
20 V low VCEsat PNP transistor |
Nexperia |
256 |
PBSS5320D |
20 V low VCEsat PNP transistor |
NXP Semiconductors |
257 |
PBSS5320D |
20 V low VCEsat PNP transistor |
Philips |
258 |
PBSS5320T |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
259 |
PBSS5320T |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
260 |
PBSS5320T |
20 V low VCEsat PNP transistor |
Philips |
261 |
PBSS5320X |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
262 |
PBSS5320X |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
263 |
PBSS5320X |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
264 |
PBSS5320X |
PBSS5320X; 20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
265 |
PBSS5320X |
PBSS5320X; 20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
266 |
PBSS5330PA |
30 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
267 |
PBSS5330PA |
30 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
268 |
PBSS5330PAS |
30 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
269 |
PBSS5330X |
30 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
270 |
PBSS5330X |
30 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
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