No. |
Part Name |
Description |
Manufacturer |
181 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
182 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
183 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
184 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
185 |
2N4402 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
186 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
187 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
188 |
2N4403 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
189 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
190 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
191 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
192 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
193 |
2N4851 |
Silicon PN unijinction transistor. |
Motorola |
194 |
2N4852 |
Silicon PN unijinction transistor. |
Motorola |
195 |
2N4853 |
Silicon PN unijinction transistor. |
Motorola |
196 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
197 |
2N4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
198 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
199 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
200 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
201 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
202 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
203 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
204 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
205 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
206 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
207 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
208 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
209 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
210 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
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