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Datasheets for STOR.

Datasheets found :: 4510
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No. Part Name Description Manufacturer
181 2N4400 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
182 2N4401 0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. Continental Device India Limited
183 2N4401 Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. General Electric Solid State
184 2N4401 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
185 2N4402 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
186 2N4402 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
187 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
188 2N4403 0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Continental Device India Limited
189 2N4403 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
190 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
191 2N4409 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE Continental Device India Limited
192 2N4424 Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. General Electric Solid State
193 2N4851 Silicon PN unijinction transistor. Motorola
194 2N4852 Silicon PN unijinction transistor. Motorola
195 2N4853 Silicon PN unijinction transistor. Motorola
196 2N4870 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
197 2N4871 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
198 2N4898 Silicon P-N-P medium power transistor. 40V, 25W. General Electric Solid State
199 2N4898 Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. Motorola
200 2N4899 Silicon P-N-P medium power transistor. 60V, 25W. General Electric Solid State
201 2N4899 Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. Motorola
202 2N4900 Silicon P-N-P medium power transistor. 80V, 25W. General Electric Solid State
203 2N4900 Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. Motorola
204 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited
205 2N4991 Planar monolithic silicon bilateral transistor. 1A. General Electric Solid State
206 2N4992 Planar monolithic silicon bilateral transistor. 1A. General Electric Solid State
207 2N5038 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
208 2N5039 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
209 2N5086 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE Continental Device India Limited
210 2N5086 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD


Datasheets found :: 4510
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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