No. |
Part Name |
Description |
Manufacturer |
91 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
92 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
93 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
94 |
2N3414 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
95 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
96 |
2N3415 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
97 |
2N3416 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
98 |
2N3417 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
99 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
100 |
2N3439 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
101 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
102 |
2N3440 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
103 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
104 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
105 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
106 |
2N3496 |
0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
107 |
2N3497 |
0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. |
Continental Device India Limited |
108 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
109 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
110 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
111 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
112 |
2N3583 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
113 |
2N3585 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
114 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
115 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
116 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
117 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
118 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
119 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
120 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
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