| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 182 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 183 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 184 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 185 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 186 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 187 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 188 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 189 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 190 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 191 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 192 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 193 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 194 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 195 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 196 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 197 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 198 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 199 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 200 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 201 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 202 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 203 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 204 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 205 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 206 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 207 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 208 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 209 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 210 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| | | |
