| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 212 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 213 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 214 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 215 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 216 |
2N968 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 217 |
2N969 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 218 |
2N970 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 219 |
2N971 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 220 |
2N972 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 221 |
2N973 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 222 |
2N974 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 223 |
2N975 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 224 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 225 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 226 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 227 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 228 |
2SA1200 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 229 |
2SA1213 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 230 |
2SA1241 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 231 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 232 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 233 |
2SA1248 |
160V/700mA Switching Applications |
SANYO |
| 234 |
2SA1249 |
160V/1.5A Switching Applications |
SANYO |
| 235 |
2SA1255 |
Transistor Silicon PNP Triple Diffused (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 236 |
2SA1289 |
60V/5A High-Speed Switching Applications |
SANYO |
| 237 |
2SA1290 |
60V/7A High-Speed Switching Applications |
SANYO |
| 238 |
2SA1291 |
60V/10A High-Speed Switching Applications |
SANYO |
| 239 |
2SA1292 |
60V/15A High-Speed Switching Applications |
SANYO |
| 240 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
| | | |
