| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA561 |
Audio Frequency Transistor |
TOSHIBA |
| 182 |
2SA562 |
Audio Frequency Transistor |
TOSHIBA |
| 183 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 184 |
2SA564 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 185 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 186 |
2SA661 |
Audio Frequency Transistor |
TOSHIBA |
| 187 |
2SA663 |
Audio Frequency Transistor |
TOSHIBA |
| 188 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 189 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 190 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 191 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 192 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 193 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 194 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 195 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 196 |
2SA950 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 197 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 198 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 199 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 200 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 201 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 202 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 203 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 204 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 205 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 206 |
2SB1375 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 207 |
2SB1475 |
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 208 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 209 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 210 |
2SB1640 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| | | |
