| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SC1000 |
Audio Frequency Transistor |
TOSHIBA |
| 302 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 303 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 304 |
2SC1004A |
Audio Frequency Transistor |
TOSHIBA |
| 305 |
2SC1079 |
Audio Frequency Transistor |
TOSHIBA |
| 306 |
2SC1080 |
Audio Frequency Transistor |
TOSHIBA |
| 307 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 308 |
2SC1166 |
Audio Frequency Transistor |
TOSHIBA |
| 309 |
2SC1167 |
Audio Frequency Transistor |
TOSHIBA |
| 310 |
2SC1170 |
Audio Frequency Transistor |
TOSHIBA |
| 311 |
2SC1170A |
Audio Frequency Transistor |
TOSHIBA |
| 312 |
2SC1171 |
Audio Frequency Transistor |
TOSHIBA |
| 313 |
2SC1172 |
Audio Frequency Transistor |
TOSHIBA |
| 314 |
2SC1172A |
Audio Frequency Transistor |
TOSHIBA |
| 315 |
2SC1173 |
Audio Frequency Transistor |
TOSHIBA |
| 316 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 317 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 318 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 319 |
2SC1623R |
NPN silicon epitaxial transistor, audio frequency and 455kHz IF amplifier |
NEC |
| 320 |
2SC1755 |
TV Chroma, Video,Audio Output Applications |
SANYO |
| 321 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 322 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 323 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 324 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 325 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 326 |
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 327 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
| 328 |
2SC2235 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 329 |
2SC2236 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 330 |
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| | | |
