| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
HM51W18165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1832 |
HM51W18165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1833 |
HM51W18165LJ-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1834 |
HM51W18165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1835 |
HM51W18165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1836 |
HM51W18165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1837 |
HM51W18165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1838 |
HM51W18165TT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1839 |
HM51W18165TT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1840 |
HM51W18165TT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 1841 |
HMJ5 |
The Communications Edge�� |
WJ Communications |
| 1842 |
HMJ5-PCB |
The Communications Edge�� |
WJ Communications |
| 1843 |
HMJ7 |
The Communications Edge�� |
WJ Communications |
| 1844 |
HMJ7-PCB |
The Communications Edge�� |
WJ Communications |
| 1845 |
HV51V7403HGL-5 |
4M x 4Bit EDO DRAM |
Hynix Semiconductor |
| 1846 |
HV51V7403HGL-6 |
4M x 4Bit EDO DRAM |
Hynix Semiconductor |
| 1847 |
HV51V7403HGL-7 |
4M x 4Bit EDO DRAM |
Hynix Semiconductor |
| 1848 |
HY51V17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 1849 |
HY51V17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 1850 |
HY51V17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 1851 |
HY51V17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
| 1852 |
HY51V17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
| 1853 |
HY51V17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
| 1854 |
HY51V17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
| 1855 |
HY51V17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
| 1856 |
HY51V17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
| 1857 |
HY51V17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 1858 |
HY51V17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 1859 |
HY51V17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 1860 |
HY51V18163HGJ |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
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