No. |
Part Name |
Description |
Manufacturer |
1891 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
1892 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
1893 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
1894 |
HY51VS17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
1895 |
HY51VS18163HG |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
1896 |
HY51VS65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
1897 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
1898 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
1899 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
1900 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1901 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1902 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1903 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
1904 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1905 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
1906 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
1907 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
1908 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
1909 |
HYB3116400BTL-50 |
4M x 4bit EDO-DRAM |
Siemens |
1910 |
HYB3116400BTL-60 |
4M x 4bit EDO-DRAM |
Siemens |
1911 |
HYB3116405BJ-50 |
4M x 4 Bit 4k 3.3 V 50 ns EDO DRAM |
Infineon |
1912 |
HYB3116405BJ-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1913 |
HYB3116405BJ-60 |
4M x 4 Bit 4k 3.3 V 60 ns EDO DRAM |
Infineon |
1914 |
HYB3116405BJ-60 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1915 |
HYB3116405BJ-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1916 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1917 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1918 |
HYB3116405BJBTL-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
1919 |
HYB3116405BT-50 |
4M x 4 Bit EDO DRAM 3.3 V 4k 50 ns |
Infineon |
1920 |
HYB3116405BT-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
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