| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2SA2077 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1832 |
2SA2078 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1833 |
2SA2079 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1834 |
2SA2080 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1835 |
2SA2081 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1836 |
2SA2084 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1837 |
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 1838 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1839 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1840 |
2SA2162 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1841 |
2SA2164 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1842 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1843 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1844 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 1845 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 1846 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 1847 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1848 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1849 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1850 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1851 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1852 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1853 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1854 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 1855 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1856 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1857 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1858 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1859 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1860 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| | | |
