| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1892 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1893 |
2SA709 |
HIGH VOLTAGE AMPLIFIER |
USHA India LTD |
| 1894 |
2SA719 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1895 |
2SA720 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1896 |
2SA720A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1897 |
2SA733 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 1898 |
2SA733 |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 1899 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1900 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1901 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1902 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1903 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 1904 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 1905 |
2SA769 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1906 |
2SA777 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1907 |
2SA781 |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1908 |
2SA781K |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1909 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 1910 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1911 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1912 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 1913 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1914 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1915 |
2SA836 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1916 |
2SA838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1917 |
2SA844 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1918 |
2SA872 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1919 |
2SA872A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1920 |
2SA879 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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