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Datasheets for PPLI

Datasheets found :: 41859
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |
No. Part Name Description Manufacturer
1831 2N4197 Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications Motorola
1832 2N4198 Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications Motorola
1833 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1834 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1835 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1836 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1837 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1838 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1839 2N4223 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
1840 2N4224 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
1841 2N4233A POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION MOSPEC Semiconductor
1842 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1843 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1844 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1845 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1846 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
1847 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
1848 2N4392CSM SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
1849 2N4393CSM SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
1850 2N4416 Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications Motorola
1851 2N4427 Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications SGS-ATES
1852 2N4428 Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications SGS-ATES
1853 2N4429 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1854 2N4430 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1855 2N4431 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1856 2N4441 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1857 2N4442 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1858 2N4443 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1859 2N4444 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1860 2N456A PNP high-current germanium power transistor for industrial applications Motorola


Datasheets found :: 41859
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |



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