| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 1892 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1893 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1894 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1895 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1896 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1897 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1898 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 1899 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1900 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1901 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 1902 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 1903 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1904 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 1905 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1906 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1907 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 1908 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1909 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 1910 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1911 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 1912 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1913 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1914 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1915 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 1916 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 1917 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1918 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1919 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1920 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| | | |
