| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 2012 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 2013 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 2014 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2015 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2016 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2017 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2018 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2019 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 2020 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 2021 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2022 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 2023 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 2024 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 2025 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2026 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2027 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2028 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 2029 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 2030 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 2031 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 2032 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 2033 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 2034 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 2035 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2036 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 2037 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2038 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2039 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2040 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
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