| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 1982 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1983 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1984 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1985 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1986 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1987 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1988 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1989 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1990 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1991 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1992 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1993 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1994 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1995 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 1996 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1997 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 1998 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1999 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2000 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2001 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2002 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2003 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 2004 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 2005 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 2006 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
| 2007 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 2008 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2009 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 2010 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
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