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Datasheets for R DUAL

Datasheets found :: 3135
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |
No. Part Name Description Manufacturer
1831 MAX6736XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1832 MAX6736XKZWD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1833 MAX6736XKZWD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1834 MAX6736XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1835 MAX6737 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1836 MAX6737XKLTD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1837 MAX6737XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1838 MAX6737XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1839 MAX6737XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1840 MAX6737XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1841 MAX6737XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1842 MAX6737XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1843 MAX6737XKRVD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1844 MAX6737XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1845 MAX6737XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1846 MAX6737XKSDD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1847 MAX6737XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1848 MAX6737XKSFD3 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1849 MAX6737XKSFD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1850 MAX6737XKSFD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1851 MAX6737XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1852 MAX6737XKSHD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1853 MAX6737XKSHD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1854 MAX6737XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1855 MAX6737XKSVD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1856 MAX6737XKSVD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1857 MAX6737XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1858 MAX6737XKSYD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1859 MAX6737XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1860 MAX6737XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 3135
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |



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