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Datasheets for R DUAL

Datasheets found :: 3135
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |
No. Part Name Description Manufacturer
1861 MAX6737XKTGD3 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1862 MAX6737XKTGD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1863 MAX6737XKTGD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1864 MAX6737XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1865 MAX6737XKTGD3-TG05 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1866 MAX6737XKTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1867 MAX6737XKTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1868 MAX6737XKTZD3 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1869 MAX6737XKTZD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1870 MAX6737XKTZD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1871 MAX6737XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1872 MAX6737XKTZD3-TG05 Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1873 MAX6737XKVDD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1874 MAX6737XKVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1875 MAX6737XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1876 MAX6737XKVHD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1877 MAX6737XKVHD3-T Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1878 MAX6737XKVRD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1879 MAX6737XKVRD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1880 MAX6737XKVRD3-T Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1881 MAX6737XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1882 MAX6737XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1883 MAX6737XKWID3-T Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1884 MAX6737XKWTD3-T Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1885 MAX6737XKYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1886 MAX6737XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1887 MAX6737XKYHD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1888 MAX6737XKYHD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
1889 MAX6737XKYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1890 MAX6737XKYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 3135
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |



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