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Datasheets for 100

Datasheets found :: 8187
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |
No. Part Name Description Manufacturer
1861 ISPLSI5256VE-100LT128I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1862 ISPLSI5256VE-100LT256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1863 ISPLSI5256VE-100LT256I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1864 ISPLSI5256VE-100LT272 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1865 ISPLSI5256VE-100LT272I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1866 ISPLSI5512VE-100LB388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1867 ISPLSI5512VE-100LB388I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1868 ISPLSI5512VE-100LF256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1869 ISPLSI5512VE-100LF256I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1870 ISPLSI5512VE-100LF272 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1871 ISPLSI5512VE-100LF272I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1872 ISPLSI5512VE-100LF388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1873 ISPLSI5512VE-100LF388I In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. Lattice Semiconductor
1874 JH-121PIN Quadrature Hybrid 100 - 200 MHz Tyco Electronics
1875 JHS-121 Quadrature Hybrid 100 - 200 MHz Tyco Electronics
1876 JHS-121PIN Quadrature Hybrid 100 - 200 MHz Tyco Electronics
1877 JV1-100V JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Sealed type. Matsushita Electric Works(Nais)
1878 JV1A-100V JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Sealed type. Matsushita Electric Works(Nais)
1879 JV1AF-100V JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Flux-resistant type. Matsushita Electric Works(Nais)
1880 JV1AP-100V JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. Matsushita Electric Works(Nais)
1881 JV1APF-100V JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Flux-resistant type. Matsushita Electric Works(Nais)
1882 JV1F-100V JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Flux-resistant type. Matsushita Electric Works(Nais)
1883 JVN1A-100V JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Sealed type. Matsushita Electric Works(Nais)
1884 JVN1AF-100V JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Flux-resistant type. Matsushita Electric Works(Nais)
1885 K100UF 10000 V rectifier 1.5-3 A forward current, 100 ns recovery time Voltage Multipliers
1886 K1040-SR 40A 100 Rectifier Diode IPRS Baneasa
1887 KBPC1001 10 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. Comchip Technology
1888 KBPC1001 Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. Shanghai Sunrise Electronics
1889 KBPC1501 15 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. Comchip Technology
1890 KBPC1501W Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 15 A. Shanghai Sunrise Electronics


Datasheets found :: 8187
Page: | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 |



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