No. |
Part Name |
Description |
Manufacturer |
1861 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1862 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1863 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1864 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1865 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1866 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1867 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1868 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1869 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1870 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1871 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1872 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1873 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
1874 |
JH-121PIN |
Quadrature Hybrid 100 - 200 MHz |
Tyco Electronics |
1875 |
JHS-121 |
Quadrature Hybrid 100 - 200 MHz |
Tyco Electronics |
1876 |
JHS-121PIN |
Quadrature Hybrid 100 - 200 MHz |
Tyco Electronics |
1877 |
JV1-100V |
JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
1878 |
JV1A-100V |
JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
1879 |
JV1AF-100V |
JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
1880 |
JV1AP-100V |
JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
1881 |
JV1APF-100V |
JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
1882 |
JV1F-100V |
JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
1883 |
JVN1A-100V |
JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
1884 |
JVN1AF-100V |
JV-N relay. Compact flat power relay for heater loads. 1 form A. Coil voltage 100 V DC. Flux-resistant type. |
Matsushita Electric Works(Nais) |
1885 |
K100UF |
10000 V rectifier 1.5-3 A forward current, 100 ns recovery time |
Voltage Multipliers |
1886 |
K1040-SR |
40A 100 Rectifier Diode |
IPRS Baneasa |
1887 |
KBPC1001 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
1888 |
KBPC1001 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
1889 |
KBPC1501 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
1890 |
KBPC1501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
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