| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
KBPC2501 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 1892 |
KBPC2501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 1893 |
KBPC3501 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 1894 |
KBPC3501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 1895 |
KBPC5001 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 1896 |
KBPC601 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
| 1897 |
KBPC801 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 1898 |
KL5KUSB220 |
USB 2.0 to 100 ethernet controller |
Kawasaki LSI |
| 1899 |
KL5KUSB221 |
USB 2.0 to 100 Base-T ethernet controller |
Kawasaki LSI |
| 1900 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 1901 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 1902 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 1903 |
KM44L32031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 1904 |
KM44S3203BT-G_FH |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). |
Samsung Electronic |
| 1905 |
KM44S3203BT-G_FL |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). |
Samsung Electronic |
| 1906 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 1907 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 1908 |
KMM366S1623BT-GH |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
| 1909 |
KMM366S1623BT-GL |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
| 1910 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 1911 |
KP1836 |
C-values 100 pF - 0.22 µF, Voltage 630 - 2000 VDC, Very high current and pulse load, Low losses, PCM 15-37.5 |
Vishay |
| 1912 |
KS0715 |
33 COM / 100 SEG DRIVER & CONTROLLER FOR STN LCD |
Samsung Electronic |
| 1913 |
KS0717 |
55 COM / 100 SEG DRIVER & CONTROLLER FOR STN LCD |
Samsung Electronic |
| 1914 |
L6114 |
QUAD 100 V, DMOS SWITCH |
SGS Thomson Microelectronics |
| 1915 |
L6115 |
QUAD 100 V, DMOS SWITCH |
SGS Thomson Microelectronics |
| 1916 |
LD7267 |
30 GHz, 100 W CW, CONDUCTION COOLING, HIGH POWER GAIN |
NEC |
| 1917 |
LLNRK100 |
POWR-PRO dual-element, time-delay class RK1 fuse. 100 A. Voltage rating: 250 VAC 125 VDC. Interrupting rating: AC: 200,000 A rms symmetrical, 300,000 A rms symmetrical (littelfuse self-certified), DC: 20,000 A. |
Littelfuse |
| 1918 |
LLSRK100 |
POWR-PRO dual-element, time-delay class RK1 fuse. 100 A. Voltage rating: 600 VAC, 300 VDC. Interrupting rating: AC: 200,000 A rms symmetrical, 300,000 A rms symmetrical (littelfuse self-certified), DC: 20,000 A. |
Littelfuse |
| 1919 |
LM6181 |
100 mA, 100 MHz Current Feedback Amplifier |
National Semiconductor |
| 1920 |
LM6181 |
100 mA, 100 MHz Current Feedback Amplifier |
Texas Instruments |
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