No. |
Part Name |
Description |
Manufacturer |
1861 |
28LV010RT4DS20 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1862 |
28LV010RT4DS25 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1863 |
28LV010RT4FB20 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1864 |
28LV010RT4FB25 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1865 |
28LV010RT4FE20 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1866 |
28LV010RT4FE25 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1867 |
28LV010RT4FI20 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1868 |
28LV010RT4FI25 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1869 |
28LV010RT4FS20 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1870 |
28LV010RT4FS25 |
3.3V 1 Megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
1871 |
28LV256JC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
1872 |
28LV256JC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1873 |
28LV256JC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
1874 |
28LV256JC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1875 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
1876 |
28LV256JC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1877 |
28LV256JC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
1878 |
28LV256JC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1879 |
28LV256JI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1880 |
28LV256JI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
1881 |
28LV256JI-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
1882 |
28LV256JI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1883 |
28LV256JI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1884 |
28LV256JI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
1885 |
28LV256JI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
1886 |
28LV256JI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1887 |
28LV256JM-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
1888 |
28LV256JM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
1889 |
28LV256JM-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
1890 |
28LV256JM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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