DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for EEPROM

Datasheets found :: 29876
Page: | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 |
No. Part Name Description Manufacturer
1951 28LV256TI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1952 28LV256TI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1953 28LV256TI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1954 28LV256TI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1955 28LV256TI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1956 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
1957 28LV256TI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
1958 28LV256TI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1959 28LV256TM-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1960 28LV256TM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1961 28LV256TM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1962 28LV256TM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1963 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
1964 28LV256TM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1965 28LV256TM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1966 28LV256TM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
1967 28LV64 64K-Bit CMOS PARALLEL EEPROM Catalyst Semiconductor
1968 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
1969 28LV64A-20/L 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1970 28LV64A-20/P 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1971 28LV64A-20/SO 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1972 28LV64A-20/TS 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1973 28LV64A-20/VS 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1974 28LV64A-20I/L 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1975 28LV64A-20I/P 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1976 28LV64A-20I/SO 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1977 28LV64A-20I/TS 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1978 28LV64A-20I/VS 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1979 28LV64A-30/L 64K (8K x 8) Low Voltage CMOS EEPROM Microchip
1980 28LV64A-30/P 64K (8K x 8) Low Voltage CMOS EEPROM Microchip


Datasheets found :: 29876
Page: | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 | 70 |



© 2024 - www Datasheet Catalog com