| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
2N1560 |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1862 |
2N1560A |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1863 |
2N1561 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 1864 |
2N1561 |
Amplifiers and Switches |
National Semiconductor |
| 1865 |
2N1566 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1866 |
2N1613 |
Silicon NPN Planar Transistor for RF amplifiers and high speed switches |
AEG-TELEFUNKEN |
| 1867 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
| 1868 |
2N1613 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1869 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1870 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1871 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1872 |
2N1613 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1873 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1874 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1875 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
ST Microelectronics |
| 1876 |
2N1613 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
| 1877 |
2N1613A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1878 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1879 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1880 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1881 |
2N1683 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1882 |
2N1700 |
Silicon N-P-N power switching transistor. 60V, 5W. |
General Electric Solid State |
| 1883 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1884 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 1885 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1886 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1887 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1888 |
2N1711 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1889 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 1890 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
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