| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N1711 |
Silicon NPN Planar Switching Transistor |
TELEFUNKEN |
| 1892 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1893 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1894 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1895 |
2N1754 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1896 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1897 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1898 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1899 |
2N1893 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 1900 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 1901 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1902 |
2N1893 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
| 1903 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1904 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1905 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1906 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1907 |
2N1991 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 1908 |
2N2048 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1909 |
2N2048A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1910 |
2N2049 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 1911 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1912 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1913 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1914 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1915 |
2N2102 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 1916 |
2N2102 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
| 1917 |
2N2168 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1918 |
2N2169 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1919 |
2N2170 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1920 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
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