No. |
Part Name |
Description |
Manufacturer |
1891 |
SCD5819 |
40 V, 1 A surface mount schottky barrier rectifier |
Zowie Technology Corporation |
1892 |
SFT1014 |
140 V, 100 A high energy NPN transistor |
Solid State Devices Inc |
1893 |
SFT2014 |
140 V, 200 A high energy NPN transistor |
Solid State Devices Inc |
1894 |
SL12 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
1895 |
SL13 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
1896 |
SL14 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
1897 |
SL22 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 2.0 Amperes) |
Panjit International Inc |
1898 |
SL23 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 2.0 Amperes) |
Panjit International Inc |
1899 |
SL24 |
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 2.0 Amperes) |
Panjit International Inc |
1900 |
SLP2040P |
40 V, 20 A, schottky rectifier |
General Instruments |
1901 |
SLP3040P |
40 V, 30 A, schottky rectifier |
General Instruments |
1902 |
SM5817 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
1903 |
SM5818 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
1904 |
SM5819 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
1905 |
SMBR1040 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1906 |
SMBR1640 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1907 |
SMBR240 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1908 |
SMBR340 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1909 |
SMBR540 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1910 |
SMBR840 |
40 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
1911 |
SOC2222A1 |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
1912 |
SOC2222AHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
1913 |
SOC2222AHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
1914 |
SOC2222ARHRG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
1915 |
SOC2222ARHRT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
1916 |
SPD2540 |
40 V, 0.25 A schottky rectifier |
Solid State Devices Inc |
1917 |
SPD5819 |
40 V, 1 A schottky rectifier |
Solid State Devices Inc |
1918 |
SPD5825 |
40 V, 5 A schottky rectifier |
Solid State Devices Inc |
1919 |
SR1040A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 10 A. |
Bytes |
1920 |
SR1040A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
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