No. |
Part Name |
Description |
Manufacturer |
1921 |
SR1040C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 10 A. |
Bytes |
1922 |
SR1640A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 16 A. |
Bytes |
1923 |
SR1640A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 16.0 A. |
Chenyi Electronics |
1924 |
SR1640C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 16 A. |
Bytes |
1925 |
SR3040A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 30 A. |
Bytes |
1926 |
SR3040C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 30 A. |
Bytes |
1927 |
SR340 |
Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A. |
Chenyi Electronics |
1928 |
SR840R |
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 8.0 A. |
Bytes |
1929 |
SRF1040 |
Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
1930 |
SRF1040A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
1931 |
SRF1640A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 16.0 A. |
Chenyi Electronics |
1932 |
SS8550 |
-40 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
1933 |
SS9012 |
-40 V, -500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
1934 |
SS9013 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
1935 |
SSA23L |
High-Current Density Surface Mount Schottky Rectifier Forward Current 2.0 A, Reverse Voltage 30 and 40 V |
Vishay |
1936 |
SSA24 |
High-Current Density Surface Mount Schottky Rectifier Forward Current 2.0 A, Reverse Voltage 30 and 40 V |
Vishay |
1937 |
STA515W |
40 V, 3 A quad power half-bridge digital audio amplifier |
ST Microelectronics |
1938 |
STA515W13TR |
40 V, 3 A quad power half-bridge digital audio amplifier |
ST Microelectronics |
1939 |
STA515WJ13TR |
40 V, 3 A quad power half-bridge digital audio amplifier |
ST Microelectronics |
1940 |
STB120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
1941 |
STB120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
1942 |
STB170NF04 |
N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
1943 |
STB270N4F3 |
N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package |
ST Microelectronics |
1944 |
STB95N4F3 |
N-channel 40 V, 5.0 mOhm, 80 A, D2PAK STripFET(TM) III Power MOSFET |
ST Microelectronics |
1945 |
STD120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
1946 |
STD120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
1947 |
STD30NF04LT |
N-channel 40 V, 0.03 Ohm typ., 30 A, STripFET(TM) II Power MOSFET in a DPAK package |
ST Microelectronics |
1948 |
STD44N4LF6 |
N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
1949 |
STD55N4F5 |
N-channel 40 V, 7.1 mOhm;, 40 A, DPAK STripFET (TM); V Power MOSFET |
ST Microelectronics |
1950 |
STD7NM64N |
N-channel 640 V, 5 A, 0.88 Ohm typ. MDmesh(TM) II Power MOSFET in a DPAK package |
ST Microelectronics |
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