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Datasheets for 40 V

Datasheets found :: 2022
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 |
No. Part Name Description Manufacturer
1921 SR1040C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 10 A. Bytes
1922 SR1640A Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 16 A. Bytes
1923 SR1640A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 16.0 A. Chenyi Electronics
1924 SR1640C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 16 A. Bytes
1925 SR3040A Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 30 A. Bytes
1926 SR3040C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 30 A. Bytes
1927 SR340 Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A. Chenyi Electronics
1928 SR840R Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 8.0 A. Bytes
1929 SRF1040 Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. Chenyi Electronics
1930 SRF1040A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 10.0 A. Chenyi Electronics
1931 SRF1640A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 16.0 A. Chenyi Electronics
1932 SS8550 -40 V, -1.5 A, PNP epitaxial silicon transistor Samsung Electronic
1933 SS9012 -40 V, -500 mA, PNP epitaxial silicon transistor Samsung Electronic
1934 SS9013 40 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
1935 SSA23L High-Current Density Surface Mount Schottky Rectifier Forward Current 2.0 A, Reverse Voltage 30 and 40 V Vishay
1936 SSA24 High-Current Density Surface Mount Schottky Rectifier Forward Current 2.0 A, Reverse Voltage 30 and 40 V Vishay
1937 STA515W 40 V, 3 A quad power half-bridge digital audio amplifier ST Microelectronics
1938 STA515W13TR 40 V, 3 A quad power half-bridge digital audio amplifier ST Microelectronics
1939 STA515WJ13TR 40 V, 3 A quad power half-bridge digital audio amplifier ST Microelectronics
1940 STB120N4F6 N-channel 40 V, 3.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1941 STB120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1942 STB170NF04 N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package ST Microelectronics
1943 STB270N4F3 N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package ST Microelectronics
1944 STB95N4F3 N-channel 40 V, 5.0 mOhm, 80 A, D2PAK STripFET(TM) III Power MOSFET ST Microelectronics
1945 STD120N4F6 N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1946 STD120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1947 STD30NF04LT N-channel 40 V, 0.03 Ohm typ., 30 A, STripFET(TM) II Power MOSFET in a DPAK package ST Microelectronics
1948 STD44N4LF6 N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1949 STD55N4F5 N-channel 40 V, 7.1 mOhm;, 40 A, DPAK STripFET (TM); V Power MOSFET ST Microelectronics
1950 STD7NM64N N-channel 640 V, 5 A, 0.88 Ohm typ. MDmesh(TM) II Power MOSFET in a DPAK package ST Microelectronics


Datasheets found :: 2022
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 |



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