No. |
Part Name |
Description |
Manufacturer |
1891 |
AZ494CUMTR-E1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1892 |
AZ494CUMTR-G1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1893 |
AZ496 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1894 |
AZ7500B |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1895 |
AZ7500BMTR-AE1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1896 |
AZ7500BMTR-E1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1897 |
AZ7500BUMTR-E1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1898 |
AZ7500C |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1899 |
AZ7500CMTR-EA |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1900 |
AZ7500CMTR-GA |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1901 |
AZ7500CUMTR-EA |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1902 |
AZ7500CUMTR-GA |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1903 |
AZ7500F |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1904 |
AZ7500FMTR-G1 |
PULSE-WIDTH-MODULATION CONTROL CIRCUITS |
Diodes |
1905 |
BAV73 |
Dual high-speed switching diode in common cathode configuration |
Philips |
1906 |
BCM8105 |
Multi-Rate 10-GBPS CDR/Demultiplexer with Electronic Dispersion Compensation |
Broadcom |
1907 |
BCR400 |
Application Considerations for the Integrated Bias Control Circuits |
Infineon |
1908 |
BD202 |
Silicon Complementary Transistors General Purpose Amplifier, Switch |
NTE Electronics |
1909 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1910 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1911 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1912 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1913 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1914 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1915 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1916 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1917 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1918 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1919 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
1920 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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