| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
BDX86B |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1982 |
BDX86C |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1983 |
BDX87 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1984 |
BDX87A |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1985 |
BDX87B |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1986 |
BDX87C |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1987 |
BDX88 |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1988 |
BDX88A |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1989 |
BDX88B |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1990 |
BDX88C |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1991 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1992 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1993 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1994 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1995 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1996 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1997 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1998 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 1999 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2000 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2001 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 2002 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 2003 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 2004 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 2005 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 2006 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 2007 |
BM1050AF |
Quasi-Resonant Control DC/DC converter and Power Factor Correction converter IC for AC/DC Converter |
ROHM |
| 2008 |
BM1050AF-GE2 |
Quasi-Resonant Control DC/DC converter and Power Factor Correction converter IC for AC/DC Converter |
ROHM |
| 2009 |
BM1051F |
Quasi-Resonant Control DC/DC converter and Power Factor Correction converter IC for AC/DC Converter |
ROHM |
| 2010 |
BM1051F-GE2 |
Quasi-Resonant Control DC/DC converter and Power Factor Correction converter IC for AC/DC Converter |
ROHM |
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