| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
BDX60 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1892 |
BDX61 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1893 |
BDY12 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1894 |
BDY12-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1895 |
BDY12-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1896 |
BDY12-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1897 |
BDY13 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1898 |
BDY13-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1899 |
BDY13-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1900 |
BDY13-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 1901 |
BDY34 |
Silicon NPN epitaxial planar transistor for AF power stages, power amplifier stages and relaise-driver stages |
AEG-TELEFUNKEN |
| 1902 |
BDY39 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1903 |
BDY39 paired |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1904 |
BDY39-4 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1905 |
BDY39-6 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 1906 |
BDY55 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 1907 |
BDY56 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 1908 |
BF137 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1909 |
BF160 |
Silicon Planar NPN transistor - IF amplifier for AM/FM radios |
SGS-ATES |
| 1910 |
BF257 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1911 |
BF258 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1912 |
BF259 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 1913 |
BF479 |
Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz |
SGS-ATES |
| 1914 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 1915 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
| 1916 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 1917 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 1918 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 1919 |
BFP136 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 1920 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
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