| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
BFP136W |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 1922 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1923 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1924 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1925 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1926 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 1927 |
BFP450 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 1928 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 1929 |
BFR180 |
RF-Bipolar - NPN Silicon RF transistor for low power amplifiers |
Infineon |
| 1930 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1931 |
BFR180W |
RF-Bipolar - NPN Silicon RF transistor for low power amplifiers |
Infineon |
| 1932 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1933 |
BFR280 |
RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers |
Infineon |
| 1934 |
BFR280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1935 |
BFR280W |
RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers |
Infineon |
| 1936 |
BFR280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 1937 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 1938 |
BFR98 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 1939 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1940 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1941 |
BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers |
Infineon |
| 1942 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1943 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
| 1944 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1945 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 1946 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 1947 |
BFY50 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
SemeLAB |
| 1948 |
BFY50 |
MEDIUM POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 1949 |
BFY50 |
MEDIUM POWER AMPLIFIERS |
SGS Thomson Microelectronics |
| 1950 |
BFY50 |
MEDIUM POWER AMPLIFIER |
ST Microelectronics |
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