| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
MC74HC147D |
Decimal-to-BCD Encoder |
Motorola |
| 1922 |
MC74HC147N |
Decimal-to-BCD Encoder |
Motorola |
| 1923 |
MCC1458 |
Dual MC1471 internally compensated, high performance operational amplifier CHIP |
Motorola |
| 1924 |
MCC1558 |
Dual MC1471 internally compensated, high performance operational amplifier CHIP |
Motorola |
| 1925 |
MCM6147AP55 |
-0.5 to +7.0V; 1Watt; 4 Kbit static random access memory |
Motorola |
| 1926 |
MCM6147AP70 |
-0.5 to +7.0V; 1Watt; 4 Kbit static random access memory |
Motorola |
| 1927 |
MCP14700 |
Power Management- Power MOSFET Drivers |
Microchip |
| 1928 |
MCP14700-E/MF |
Power Management- Power MOSFET Drivers |
Microchip |
| 1929 |
MCP14700-E/SN |
Power Management- Power MOSFET Drivers |
Microchip |
| 1930 |
MCP14700T-E/MF |
Power Management- Power MOSFET Drivers |
Microchip |
| 1931 |
MCP14700T-E/SN |
Power Management- Power MOSFET Drivers |
Microchip |
| 1932 |
MH32D64AKQJ-10 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 1933 |
MH32D64AKQJ-75 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 1934 |
MH32D64KQH-10 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 1935 |
MH32D64KQH-75 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 1936 |
MH32S64APFB-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1937 |
MH32S64APFB-8 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1938 |
MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 1939 |
MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 1940 |
MH32S64APHB-8 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 1941 |
MH32S64PFJ-6 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1942 |
MH32S64PFJ-6L |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1943 |
MH32S64PFJ-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1944 |
MH32S64PFJ-7L |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 1945 |
MH32S64PHB-6 |
2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 1946 |
MJ1471 |
2 MBIT PCM Signalling circuit - HDB3 OR AMI encoder/decoder |
PLESSEY Semiconductors |
| 1947 |
MM1475 |
Lithium ion battery chargihg control (microcomputer-controlled type) |
Mitsumi Electric |
| 1948 |
MM1478 |
Regulator+Reset IC |
Mitsumi Electric |
| 1949 |
MM1478A |
Regulator+reset IC for use in CD-ROM drives, regulator output voltage = 3.4V, detection voltage = 4.2V |
Mitsumi Electric |
| 1950 |
MM1478D |
Regulator+reset IC for use in CD-ROM drives, regulator output voltage = 3.3V, detection voltage = 4.2V |
Mitsumi Electric |
| | | |
