No. |
Part Name |
Description |
Manufacturer |
2011 |
N82S147AN |
V(cc): 7.0V; 4K-bit TTL bipolar PROM |
Philips |
2012 |
N82S147N |
V(cc): 7.0V; 4K-bit TTL bipolar PROM |
Philips |
2013 |
NFA31GD1014704 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
2014 |
NJM2147 |
Dual High Voltage and Low Power Operational Amplifier |
New Japan Radio |
2015 |
NJM2147D |
DUAL HIGH VOLTAGE AND LOW POWER OPERATIONAL AMPLIFIER IC |
New Japan Radio |
2016 |
NJM2147M |
DUAL HIGH VOLTAGE AND LOW POWER OPERATIONAL AMPLIFIER IC |
New Japan Radio |
2017 |
NJU26147 |
NJU26100 Series Hardware Specification |
New Japan Radio |
2018 |
NJW1147 |
AUDIO PROCESSOR with BBE ViVA |
New Japan Radio |
2019 |
NJW1147L |
AUDIO PROCESSOR with BBE ViVA |
New Japan Radio |
2020 |
NJW1147M |
AUDIO PROCESSOR with BBE ViVA |
New Japan Radio |
2021 |
NTE1470 |
Integrated Circuit Audio Power Amp, 2.5W for Table Top Stereo |
NTE Electronics |
2022 |
NTE1472 |
Integrated Circuit Audio Power Amplifier, 1W for Tape Recorder |
NTE Electronics |
2023 |
NTE1475 |
Integrated Circuit CMOS, Phase-Locked Loop (PLL) Frequency Synthesizer for CB |
NTE Electronics |
2024 |
NTE1476 |
Integrated Circuit Audio Power Amplifier, 1.4W |
NTE Electronics |
2025 |
NTE1477 |
Integrated Circuit 2 Channel Amplifier for Headphone Use |
NTE Electronics |
2026 |
NTE1478 |
Integrated Circuit Solenoid Driver & Signal Sensing Circuit |
NTE Electronics |
2027 |
NTE147A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 33V. Zener test current Izt = 7.5mA. |
NTE Electronics |
2028 |
NTE5147A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 51V. Test current Izt = 25mA. |
NTE Electronics |
2029 |
NTE7147 |
Integrated Circuit Full Bridge Current Driven Vertical Deflection Booster |
NTE Electronics |
2030 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
2031 |
NTMFS4934N |
Power MOSFET, 30 V, 147 A, Single N−Channel, SO−8 FL |
ON Semiconductor |
2032 |
NX2147CMTR |
Step-Down Buck Controllers |
Microsemi |
2033 |
NX6508GH47 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). |
NEC |
2034 |
NX6508GK47 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). |
NEC |
2035 |
NX8508BM47-CC |
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Flat mount flange. Wavelength(typ) 1470 nm. |
NEC |
2036 |
NX8508CG47-CC |
InGaAsP MQW-DFB laser module for 2.5 Gb/s, CWDM application. With SC-UPC connector. Vertical mount flange. Wavelength(typ) 1470 nm. |
NEC |
2037 |
NX8510UD47 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1470 nm. |
NEC |
2038 |
OP-147 |
Unity-gain stable, high-speed operational amplifier |
Precision Monolithics |
2039 |
OP147 |
Unity-gain stable, high-speed operational amplifier |
Precision Monolithics |
2040 |
OP147P |
Unity-gain stable, high-speed operational amplifier |
Precision Monolithics |
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