| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 1922 |
INA-54063-TR1 |
3.0 GHz Low Noise Silicon MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 1923 |
INA03184 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 1924 |
INA10386 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
| 1925 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1926 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1927 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 1928 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1929 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1930 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1931 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1932 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1933 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1934 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 1935 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 1936 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 1937 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 1938 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1939 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1940 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1941 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 1942 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 1943 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 1944 |
IW4001BD |
Quad 2-input NOR gate, high-voltage silicon-gate CMOS |
INTEGRAL |
| 1945 |
IW4001BN |
Quad 2-input NOR gate, high-voltage silicon-gate CMOS |
INTEGRAL |
| 1946 |
IW4002B |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS |
INTEGRAL |
| 1947 |
IW4002BD |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS |
INTEGRAL |
| 1948 |
IW4002BN |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS |
INTEGRAL |
| 1949 |
IW4011B |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS |
INTEGRAL |
| 1950 |
IW4011BD |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS |
INTEGRAL |
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