No. |
Part Name |
Description |
Manufacturer |
2011 |
IW4093B |
Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS |
INTEGRAL Semiconductor Devices |
2012 |
IW4093BD |
Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS |
INTEGRAL Semiconductor Devices |
2013 |
IW4093BN |
Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS |
INTEGRAL Semiconductor Devices |
2014 |
IW4502BD |
Strobed hex inverter/buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
2015 |
IW4502BN |
Strobed hex inverter/buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
2016 |
IW4503BD |
Hex buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
2017 |
IW4503BN |
Hex buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
2018 |
IW4516 |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
2019 |
IW4516B |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
2020 |
IW4516BD |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
2021 |
IW4516BN |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
2022 |
IW4520BD |
Dual up-counter, high-voltage silicon-gate CMOS |
INTEGRAL |
2023 |
IW4520BN |
Dual up-counter, high-voltage silicon-gate CMOS |
INTEGRAL |
2024 |
IW4541BD |
Programmable timer, high-performance silicon-gate CMOS |
INTEGRAL |
2025 |
IW4541BN |
Programmable timer, high-performance silicon-gate CMOS |
INTEGRAL |
2026 |
JDH2S01T |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer |
TOSHIBA |
2027 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
2028 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2029 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2030 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2031 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2032 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2033 |
JDP2S02S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2034 |
JDP2S02T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2035 |
JDP2S04E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2036 |
JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
2037 |
JDS2S03S |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
2038 |
JDV2S01E |
Diode Silicon Epitaxial Planar Type VCO for UHF band |
TOSHIBA |
2039 |
JDV2S01S |
Diode Silicon Epitaxial Planar Type VCO for UHF band |
TOSHIBA |
2040 |
JDV2S02E |
Diode Silicon Epitaxial Planar Type, VCO for UHF band |
TOSHIBA |
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