| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1922 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1923 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 1924 |
2SC1047 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1925 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 1926 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 1927 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 1928 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 1929 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 1930 |
2SC1061 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1931 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 1932 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 1933 |
2SC1079 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 1934 |
2SC1080 |
Silicon NPN triple diffused MESA power transistor, high power amplifier applications |
TOSHIBA |
| 1935 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 1936 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 1937 |
2SC1164 |
Silicon NPN epitaxial planar high power for CATV amplifiers transistor |
TOSHIBA |
| 1938 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
| 1939 |
2SC1175 |
Medium Power Amplifiers and Switches |
Unknow |
| 1940 |
2SC1187 |
TV 1ST 2ND PICTURE IF AMPLIFIER |
USHA India LTD |
| 1941 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
| 1942 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 1943 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 1944 |
2SC1199 |
Silicon NPN epitaxial planar transistor, RF Wide-Band low-noise amplifier |
TOSHIBA |
| 1945 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 1946 |
2SC1209 |
Medium Power Amplifiers and Switches |
Unknow |
| 1947 |
2SC1213 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1948 |
2SC1213A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1949 |
2SC1213A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1950 |
2SC1213AB |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
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