| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2012 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2013 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 2014 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 2015 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 2016 |
2SC1827 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2017 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
| 2018 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 2019 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| 2020 |
2SC1890A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2021 |
2SC1906 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2022 |
2SC1907 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2023 |
2SC1921 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2024 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 2025 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 2026 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 2027 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2028 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2029 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 2030 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 2031 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 2032 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 2033 |
2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS |
TOSHIBA |
| 2034 |
2SC2076 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 2035 |
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications |
SANYO |
| 2036 |
2SC2091 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 2037 |
2SC2092 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 2038 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
| 2039 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 2040 |
2SC2101 |
Silicon NPN epitaxial planar transistor, VHF band power amplifier applications |
TOSHIBA |
| | | |
