| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
1N5386 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 1952 |
1N5386 |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 1953 |
1N5386B |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 1954 |
1N5386B |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 1955 |
1N5387B |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 1956 |
1N5387B |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 1957 |
1N5388B |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 1958 |
1N5388B |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 1959 |
1N5391S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1960 |
1N5392S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1961 |
1N5393S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1962 |
1N5395S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1963 |
1N5397S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1964 |
1N5398S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1965 |
1N5399S |
Discrete Devices -Diode-Standard Rectifier |
Taiwan Semiconductor |
| 1966 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1967 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1968 |
1N5518-1 |
LOW VOLTAGE AVALANCHE DIODES DO-35 |
Microsemi |
| 1969 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1970 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1971 |
1N5519 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1972 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1973 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1974 |
1N5520 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1975 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1976 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1977 |
1N5521 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1978 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1979 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1980 |
1N5522 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
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