| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
1N5532B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2012 |
1N5532B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2013 |
1N5533 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2014 |
1N5533B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2015 |
1N5533B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2016 |
1N5534 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2017 |
1N5534B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2018 |
1N5534B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2019 |
1N5535 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2020 |
1N5535B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2021 |
1N5535B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2022 |
1N5536 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2023 |
1N5536B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2024 |
1N5536B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2025 |
1N5537 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2026 |
1N5537B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2027 |
1N5537B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2028 |
1N5538 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2029 |
1N5538B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2030 |
1N5538B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2031 |
1N5539 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2032 |
1N5539B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2033 |
1N5539B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2034 |
1N5540 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2035 |
1N5540B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2036 |
1N5540B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2037 |
1N5541 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 2038 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2039 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 2040 |
1N5542 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| | | |
