| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
CLVC1G32MDCKREPG4 |
Enhanced Product Single 2-Input Positive-Or Gate 5-SC70 -55 to 125 |
Texas Instruments |
| 1952 |
CLVC2G125IDCTRQ1 |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
| 1953 |
CLVC2G125IDCTRQ1 |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
| 1954 |
CLVC2G125IDCURQ1 |
Automotive Catalog Dual Bus Buffer Gate with 3-State Outputs 8-VSSOP -40 to 85 |
Texas Instruments |
| 1955 |
CLVC2G126MDCUTEP |
Dual Bus Buffer Gate With 3-State Outputs 8-VSSOP -55 to 125 |
Texas Instruments |
| 1956 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1957 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1958 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1959 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1960 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1961 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1962 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1963 |
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1964 |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1965 |
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1966 |
CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1967 |
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1968 |
CM1200HC-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1969 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1970 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1971 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1972 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1973 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1974 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1975 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1976 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1977 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1978 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1979 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1980 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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