| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1982 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 1983 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1984 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1985 |
CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1986 |
CM400DY-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1987 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1988 |
CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1989 |
CM400HU-24F |
Trench Gate Design Single IGBTMOD�� 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1990 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1991 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
| 1992 |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1993 |
CM50TJ-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1994 |
CM50TU-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 1995 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1996 |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1997 |
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1998 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 1999 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2000 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 2001 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 2002 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2003 |
CM600HU-12F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2004 |
CM600HU-24F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2005 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2006 |
CM75DU-24F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2007 |
CM75TJ-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2008 |
CM75TU-12F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 2009 |
CM75TU-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 2010 |
CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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