| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 1952 |
BD537 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 1953 |
BD538 |
50.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. |
Continental Device India Limited |
| 1954 |
BD538 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 1955 |
BD561 |
4A medium power transistor NPN silicon 40V 40W |
Motorola |
| 1956 |
BD562 |
4A medium power transistor PNP silicon 40V 40W |
Motorola |
| 1957 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1958 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1959 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1960 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1961 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1962 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1963 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1964 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1965 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1966 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1967 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1968 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1969 |
BD905 |
90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1970 |
BD906 |
90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1971 |
BD907 |
90.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1972 |
BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1973 |
BD909 |
90.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1974 |
BD910 |
90.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1975 |
BD911 |
90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1976 |
BD912 |
90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1977 |
BD949 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1978 |
BD950 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1979 |
BD951 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1980 |
BD952 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
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