| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
BD953 |
40.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1982 |
BD954 |
40.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1983 |
BD955 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1984 |
BD956 |
40.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1985 |
BDP31 |
NPN medium power transistor |
Philips |
| 1986 |
BDP32 |
PNP medium power transistor |
Philips |
| 1987 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1988 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1989 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1990 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1991 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1992 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1993 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1994 |
BDW24C |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1995 |
BDX70 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1996 |
BDX71 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 1997 |
BDX71 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1998 |
BDX72 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 1999 |
BDX73 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 2000 |
BDX73 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2001 |
BDX74 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2002 |
BDX75 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 2003 |
BDX75 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 2004 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 2005 |
BF336 |
Silicon n-p-n medium power transistor |
Mullard |
| 2006 |
BF337 |
Silicon n-p-n medium power transistor |
Mullard |
| 2007 |
BF338 |
Silicon n-p-n medium power transistor |
Mullard |
| 2008 |
BF457 |
10.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 2009 |
BF457 |
0.1A NPN planar silicon medium power transistor |
Motorola |
| 2010 |
BF458 |
10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
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