| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1952 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1953 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1954 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1955 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1956 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1957 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 1958 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1959 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 1960 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 1961 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1962 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1963 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1964 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1965 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 1966 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1967 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1968 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1969 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 1970 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 1971 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1972 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 1973 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1974 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 1975 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 1976 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1977 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1978 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1979 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1980 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
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