| No. |
Part Name |
Description |
Manufacturer |
| 1981 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1982 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1983 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 1984 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1985 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1986 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1987 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1988 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1989 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1990 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1991 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1992 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1993 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 1994 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1995 |
2N968 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1996 |
2N969 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1997 |
2N970 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1998 |
2N971 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1999 |
2N972 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2000 |
2N973 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2001 |
2N974 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2002 |
2N975 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2003 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2004 |
2NH45 |
FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 2005 |
2NU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 2006 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2007 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2008 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 2009 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 2010 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
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