| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2SC1424 |
NPN silicon general purpose transistor (This datasheet of the NE73412 is also the datasheet of 2SC1424, see the Electrical Characteristics table) |
NEC |
| 1952 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1953 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
| 1954 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1955 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 1956 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 1957 |
2SC2412 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 1958 |
2SC2412KLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 1959 |
2SC2412KQKT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 1960 |
2SC2412KQLT1 |
50 V, general purpose transistor |
Leshan Radio Company |
| 1961 |
2SC2412KRLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 1962 |
2SC2412KSLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 1963 |
2SC2412KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 1964 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1965 |
2SC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 1966 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1967 |
2SC2759 |
NPN silicon general purpose transistor (This datasheet of the NE73433 is also the datasheet of 2SC2759, see the Electrical Characteristics table) |
NEC |
| 1968 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 1969 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
| 1970 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 1971 |
2SC3906KFRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1972 |
2SC3906KFRAT146 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1973 |
2SC3906KT146 |
NPN General Purpose Amplification Transistor |
ROHM |
| 1974 |
2SC4081FRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1975 |
2SC4081FRAT106 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1976 |
2SC4081RT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 1977 |
2SC4081T106 |
NPN General Purpose Amplification Transistor |
ROHM |
| 1978 |
2SC4081UB |
NPN General Purpose Amplification Transistor |
ROHM |
| 1979 |
2SC4081UBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 1980 |
2SC4081UBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
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